MBR60030 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 30V 300A 2TOWER
| Part | Mounting Type | Package / Case | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Reverse Leakage @ Vr | Technology | Diode Configuration | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Speed | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Chassis Mount | Twin Tower | Twin Tower | 30 V | 300 A | 750 mV | 1 mA | Schottky | 1 Pair Common Anode | -55 °C | 150 °C | 200 mA 500 ns | |
GeneSiC Semiconductor | Chassis Mount | Twin Tower | Twin Tower | 30 V | 300 A | 750 mV | 1 mA | Schottky | 1 Pair Common Cathode | -55 °C | 150 °C | 200 mA 500 ns | |
GeneSiC Semiconductor | Chassis Mount | Twin Tower | Twin Tower | 30 V | 300 A | 3 mA | Schottky | 1 Pair Common Anode | -55 °C | 150 °C | 200 mA 500 ns | 580 mV |