SIHA30 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 28A TO220
| Part | Package / Case | Mounting Type | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-220-3 Full Pack | Through Hole | 4 V | -55 °C | 150 °C | 30 V | 28 A | 2565 pF | 120 mOhm | 10 V | N-Channel | 39 W | TO-220 Full Pack | 600 V | 120 nC | MOSFET (Metal Oxide) |