TK6A80E Series

Catalog

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 800 V, 1.7 Ω@10V, TO-220SIS, Π-MOSⅧ

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage TK6A80E,S4X	1350 pF	150 °C	30 V	4 V	TO-220SIS	6 A	1.7 Ohm	MOSFET (Metal Oxide)	800 V	Through Hole	TO-220-3 Full Pack	N-Channel	32 nC	45 W	10 V