IRFBG20 Series

Catalog

MOSFET N-CH 1000V 1.4A TO220AB

Part	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Vishay General Semiconductor - Diodes Division IRFBG20	Through Hole	1000 V	MOSFET (Metal Oxide)	54 W	4 V	10 V	11 Ohm	1.4 A	N-Channel	TO-220-3	-55 °C	150 °C	38 nC	20 V	500 pF	TO-220AB
Vishay General Semiconductor - Diodes Division IRFBG20PBF-BE3	Through Hole	1000 V	MOSFET (Metal Oxide)	54 W	4 V	10 V	11 Ohm	1.4 A	N-Channel	TO-220-3	-55 °C	150 °C	38 nC	20 V	500 pF	TO-220AB