MUR20060 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 600V 100A 2TOWER
| Part | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Diode Configuration | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Technology | Supplier Device Package | Reverse Recovery Time (trr) | Current - Average Rectified (Io) (per Diode) | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1.7 V | -55 °C | 150 °C | 1 Pair Common Anode | Chassis Mount | 600 V | Twin Tower | Standard | Twin Tower | 110 ns | 100 A | 200 mA 500 ns |
GeneSiC Semiconductor | 1.7 V | -55 °C | 150 °C | 1 Pair Common Cathode | Chassis Mount | 600 V | Twin Tower | Standard | Twin Tower | 110 ns | 100 A | 200 mA 500 ns |