Catalog
650V 11A TO-220FM, Low-noise Power MOSFET
Description
AI
R6511ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 11A TO-220FM, Low-noise Power MOSFET
650V 11A TO-220FM, Low-noise Power MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Technology | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 32 nC | 650 V | 670 pF | TO-220FM | 4 V | 150 °C | 20 V | 10 V | TO-220-3 Full Pack | MOSFET (Metal Oxide) | Through Hole | 400 mOhm | N-Channel | 11 A | 53 W |