MOSFET – Power, Single, N-Channel
MOSFET – Power, Single, N-Channel
| Part | Current - Continuous Drain (Id) @ 25°C | Package / Case | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Grade | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 8 A 25 A | 8-PowerTDFN 5 Leads | 3.4 W 28 W | 5.7 nC | 60 V | 22 mOhm | 333 pF | N-Channel | Automotive | MOSFET (Metal Oxide) | 4 V | 5-DFN (5x6) | 8-SOFL | 10 V | 20 V | -55 °C | 175 ░C | Surface Mount | AEC-Q101 |