FDD6 Series
Manufacturer: ON Semiconductor
MOSFET N-CH 200V 4.5A D-PAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | -55 °C | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5 V | 10 V | 200 V | 800 mOhm | N-Channel | 30 V | 4.5 A | Surface Mount | 6.1 nC | 40 W | TO-252AA | MOSFET (Metal Oxide) | 230 pF | ||
ON Semiconductor | -55 °C | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5 V | 10 V | 500 V | 900 mOhm | N-Channel | 30 V | 6 A | Surface Mount | 16.6 nC | TO-252AA | MOSFET (Metal Oxide) | 940 pF | |||
ON Semiconductor | -55 °C | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 5 V | 10 V | 250 V | 1.1 Ohm | N-Channel | 30 V | 4.4 A | Surface Mount | TO-252AA | MOSFET (Metal Oxide) | 250 pF | 50 W | 6 nC |