SQ7414 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 5.6A PPAK 1212-8
| Part | Supplier Device Package | Package / Case | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Grade | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | PowerPAK® 1212-8 | N-Channel | 26 mOhm | 62 W | 60 V | 4.5 V 10 V | 980 pF | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 24 nC | 2.5 V | Automotive | 16 A | Surface Mount | AEC-Q101 | ||
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | PowerPAK® 1212-8 | N-Channel | 62 W | 60 V | 4.5 V 10 V | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 25 nC | 2.5 V | 18 A | Surface Mount | 1590 pF | 23 mOhm | ||||
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | PowerPAK® 1212-8 | N-Channel | 26 mOhm | 62 W | 60 V | 4.5 V 10 V | 980 pF | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 24 nC | 2.5 V | Automotive | 16 A | Surface Mount | AEC-Q101 | ||
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8W | PowerPAK® 1212-8W | N-Channel | 62 W | 60 V | 4.5 V 10 V | 20 V | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 25 nC | 2.5 V | Automotive | 18 A | Surface Mount | AEC-Q101 | 1590 pF | 23 mOhm |