SIHB085 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
E SERIES POWER MOSFET WITH FAST
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Rds On (Max) @ Id, Vgs | Package / Case | Technology | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 63 nC | 2733 pF | 5 V | -55 °C | 150 °C | N-Channel | 84 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | TO-263 (D2PAK) | 10 V | Surface Mount | 34 A | 30 V | 600 V |