SI5433 Series

Catalog

MOSFET P-CH 20V 4.8A 1206-8

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI5433BDC-T1-GE3	1.8 V 4.5 V	37 mOhm	1206-8 ChipFET™	8 V	P-Channel	20 V	1 V	MOSFET (Metal Oxide)	1.3 W	-55 °C	150 °C	Surface Mount	22 nC	4.8 A
Vishay General Semiconductor - Diodes Division SI5433BDC-T1-E3	1.8 V 4.5 V	37 mOhm	1206-8 ChipFET™	8 V	P-Channel	20 V	1 V	MOSFET (Metal Oxide)	1.3 W	-55 °C	150 °C	Surface Mount	22 nC	4.8 A