TK25A60 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.125 Ω@10V, TO-220SIS, DTMOSⅣ-H
| Part | Operating Temperature | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | 600 V | 40 nC | 125 mOhm | N-Channel | 10 V | 30 V | 45 W | TO-220-3 Full Pack | 3.5 V | MOSFET (Metal Oxide) | 25 A | TO-220SIS | 2400 pF | Through Hole |