FCU5N60 Series

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type
ON Semiconductor FCU5N60TU	IPAK	-55 °C	150 °C	Through Hole	4.6 A	950 mOhm	5 V	54 W	600 pF	MOSFET (Metal Oxide)	600 V	IPAK TO-251-3 Short Leads TO-251AA	10 V	16 nC	30 V	N-Channel

Catalog

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK

Key Features

• 650 V @ TJ= 150°C

• Typ. RDS(on)= 810 mΩ

• Ultra Low Gate Charge (Typ. Qg= 16 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 32 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®MOSFET is ON Semiconductor Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.