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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 2 V | 150 °C | -55 °C | 3.2 A | Surface Mount | 20 V | 6.3 nC | 209 pF | 8.33 W | 400 mW | 30 V | N-Channel | 3-XDFN Exposed Pad | MOSFET (Metal Oxide) | DFN1010D-3 | 55 mOhm | 4.5 V 10 V |