SQ4182 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CHANNEL 30V 32A 8SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Power Dissipation (Max) | Vgs (Max) | Grade | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 7.1 W | 20 V | Automotive | 30 V | 8-SOIC | Surface Mount | -55 °C | 175 ░C | 2.5 V | 32 A | N-Channel | 3.8 mOhm | 4.5 V 10 V | AEC-Q101 | 5400 pF | 110 nC |
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 7.1 W | 20 V | Automotive | 30 V | 8-SOIC | Surface Mount | -55 °C | 175 ░C | 2.5 V | 32 A | N-Channel | 3.8 mOhm | 4.5 V 10 V | AEC-Q101 | 5400 pF | 110 nC |