SI5461 Series

Catalog

MOSFET P-CH 20V 4.5A 1206-8

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI5461EDC-T1-GE3	1.8 V 4.5 V	4.5 A	20 V	MOSFET (Metal Oxide)	45 mOhm	P-Channel	1206-8 ChipFET™	450 mV	12 V	Surface Mount	20 nC	1.3 W	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI5461EDC-T1-E3	1.8 V 4.5 V	4.5 A	20 V	MOSFET (Metal Oxide)	45 mOhm	P-Channel	1206-8 ChipFET™	450 mV	12 V	Surface Mount	20 nC	1.3 W	-55 °C	150 °C