Catalog
1200V, 10A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Beta
⌘K
1200V, 10A, SMD, Silicon-carbide (SiC) SBD
1200V, 10A, SMD, Silicon-carbide (SiC) SBD
| Part | Package / Case | Speed | Capacitance @ Vr, F | Operating Temperature - Junction | Technology | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Current - Reverse Leakage @ Vr | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 500 mA | 530 pF | 175 °C | SiC (Silicon Carbide) Schottky | Surface Mount | 1.2 kV | TO-263L | 200 µA | 0 ns | 1.6 V | 10 A |