US6M2 Series

2.5V Drive Nch+Pch MOSFET

Catalog

2.5V Drive Nch+Pch MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Configuration	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Operating Temperature	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package
Rohm Semiconductor US6M2TR	2.2 nC	1 W	N and P-Channel	20 V 30 V	80 pF	6-SMD Flat Leads	150 °C	240 mOhm	MOSFET (Metal Oxide)	1 A 1.5 A	1.5 V	Surface Mount	TUMT6

Catalog

2.5V Drive Nch+Pch MOSFET

Description

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.