GD25S512 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 512MBIT SPI/QUAD 8WSON
| Part | Memory Type | Memory Size | Package / Case | Mounting Type | Memory Organization | Technology | Supplier Device Package | Access Time | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Memory Format | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Clock Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 64 MB | 8-WDFN Exposed Pad | Surface Mount | 64 M | FLASH - NOR (SLC) | 8-WSON (6x8) | 7 ns | 125 °C | -40 °C | SPI - Quad I/O | FLASH | 60 µs | 2.5 ms | 3.6 V | 2.7 V | 104 MHz |
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 64 MB | 8-WDFN Exposed Pad | Surface Mount | 64 M | FLASH - NOR | 8-WSON (6x8) | 85 C | -40 ¯C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 3.6 V | 2.7 V | 104 MHz | |
GigaDevice Semiconductor (HK) Limited | Non-Volatile | 64 MB | 24-TBGA | Surface Mount | 64 M | FLASH - NOR | 24-TFBGA (6x8) | 85 C | -40 ¯C | SPI - Quad I/O | FLASH | 50 µs | 2.4 ms | 3.6 V | 2.7 V | 104 MHz |