Catalog
650V, 15A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Beta
⌘K
650V, 15A, SMD, Silicon-carbide (SiC) SBD
650V, 15A, SMD, Silicon-carbide (SiC) SBD
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Current - Average Rectified (Io) | Operating Temperature - Junction | Technology | Current - Reverse Leakage @ Vr | Supplier Device Package | Reverse Recovery Time (trr) | Package / Case | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | 550 pF | 15 A | 175 °C | SiC (Silicon Carbide) Schottky | 300 µA | TO-263L | 0 ns | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 1.5 V | 500 mA |