IRFR9024 Series

Catalog

MOSFET P-CH 60V 8.8A DPAK

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Technology
Vishay General Semiconductor - Diodes Division IRFR9024TRPBF-BE3	20 V	-55 °C	150 °C	P-Channel	19 nC	TO-252AA	4 V	2.5 W 42 W	Surface Mount	8.8 A	570 pF	10 V	280 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFR9024TRR	20 V	-55 °C	150 °C	P-Channel	19 nC	DPAK	4 V	2.5 W 42 W	Surface Mount	8.8 A	570 pF	10 V	280 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFR9024TRPBF	20 V	-55 °C	150 °C	P-Channel	19 nC	DPAK	4 V	2.5 W 42 W	Surface Mount	8.8 A	570 pF	10 V	280 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFR9024TRL	20 V	-55 °C	150 °C	P-Channel	19 nC	DPAK	4 V	2.5 W 42 W	Surface Mount	8.8 A	570 pF	10 V	280 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division IRFR9024TRLPBF	20 V	-55 °C	150 °C	P-Channel	19 nC	DPAK	4 V	2.5 W 42 W	Surface Mount	8.8 A	570 pF	10 V	280 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	MOSFET (Metal Oxide)