SIS890 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 100V 30A PPAK1212-8
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs (Max) | Package / Case | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | 30 A | MOSFET (Metal Oxide) | 20 V | PowerPAK® 1212-8 | 3 V | 3.7 W 52 W | Surface Mount | -55 °C | 150 °C | N-Channel | 100 V | 802 pF | 29 nC | 4.5 V 10 V | 23.5 mOhm |