MJE181%20(LEGACY%20FAIRCHILD) Series

3.0 A, 60 V NPN Bipolar Power Transistor

Catalog

3.0 A, 60 V NPN Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MJE181STU	100 µA	NPN	1.7 V	Through Hole	50 MHz	1.5 W	3 A	150 °C	TO-126-3	60 V	50 hFE	TO-126-3 TO-225AA
ON Semiconductor MJE181G	100 nA	NPN	1.7 V	Through Hole	50 MHz	1.5 W	3 A		TO-126	60 V	50 hFE	TO-126-3 TO-225AA	150 °C	-65 °C
ON Semiconductor MJE181STU	100 µA	NPN	1.7 V	Through Hole	50 MHz	1.5 W	3 A	150 °C	TO-126-3	60 V	50 hFE	TO-126-3 TO-225AA

Catalog

3.0 A, 60 V NPN Bipolar Power Transistor

Key Features

• Collector-Emitter Sustaining Voltage -VCEO(sus)= 60 Vdc - MJE171, MJE181VCEO(sus)= 80 Vdc - MJE172, MJE182

• DC Current Gain -hFE= 30 (Min) @ IC= 0.5 AdchFE= 12 (Min) @ IC= 1.5 Adc

• Current-Gain - Bandwidth Product -fT= 50 MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low Leakages -ICBO= 100 nA (Max) @ Rated VCB

• Pb-Free Packages are Available

Description

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. The MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.Replacement Active Part Number:MJE181