FQB9N50C Series

Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
ON Semiconductor FQB9N50CTM	1030 pF	TO-263 (D2PAK)	35 nC	N-Channel	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	800 mOhm	MOSFET (Metal Oxide)	500 V	9 A	30 V	4 V	Surface Mount	-55 °C	150 °C	135 W

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, D2PAK

Key Features

• 9A, 500V, RDS(on)= 800mΩ(Max.) @VGS= 10 V, ID= 4.5A

• Low gate charge ( Typ. 28nC)

• Low Crss( Typ. 24pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.