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N-Channel Enhancement Mode Vertical DMOS FET
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N-Channel Enhancement Mode Vertical DMOS FET
N-Channel Enhancement Mode Vertical DMOS FET
| Part | Configuration | Supplier Device Package | Package / Case | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 2 N-Channel (Dual) | SM8 | SOT-223-8 | MOSFET (Metal Oxide) | 60 V | Surface Mount | ||||||||||||
 Diodes Inc | SOT-223-3 | TO-261-4 TO-261AA | MOSFET (Metal Oxide) | 60 V | Surface Mount | 10 V | 5 V | 1 A | N-Channel | 1 Ohm | 2 W | 100 pF | 20 V | -55 °C | 150 °C | 3 V | ||
Diodes Inc | SOT-223-3 | TO-261-4 TO-261AA | MOSFET (Metal Oxide) | 60 V | Surface Mount | 10 V | 5 V | 1 A | N-Channel | 1 Ohm | 2 W | 100 pF | 20 V | -55 °C | 150 °C | 3 V | ||
 Diodes Inc | E-Line (TO-92 compatible) | E-Line-3 | MOSFET (Metal Oxide) | 60 V | Through Hole | 10 V | 5 V | 600 mA | N-Channel | 1 Ohm | 100 pF | 20 V | -55 °C | 150 °C | 3 V | 700 mW | ||
Diodes Inc | SOT-223-3 | TO-261-4 TO-261AA | MOSFET (Metal Oxide) | 60 V | Surface Mount | 10 V | 5 V | 1 A | N-Channel | 1 Ohm | 2 W | 100 pF | 20 V | -55 °C | 150 °C | 3 V |