IRFR9020 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 50V 9.9A DPAK
| Part | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 V | 9.9 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | -55 °C | 150 °C | 42 W | 10 V | 280 mOhm | Surface Mount | DPAK | 50 V | 4 V | 14 nC |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 V | 9.9 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | -55 °C | 150 °C | 42 W | 10 V | 280 mOhm | Surface Mount | DPAK | 50 V | 4 V | 14 nC |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 V | 9.9 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | -55 °C | 150 °C | 42 W | 10 V | 280 mOhm | Surface Mount | DPAK | 50 V | 4 V | 14 nC |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 V | 9.9 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | -55 °C | 150 °C | 42 W | 10 V | 280 mOhm | Surface Mount | DPAK | 50 V | 4 V | 14 nC |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 V | 9.9 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | -55 °C | 150 °C | 42 W | 10 V | 280 mOhm | Surface Mount | DPAK | 50 V | 4 V | 14 nC |