GB05SLT12 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1.2KV 5A TO220-2
| Part | Package / Case | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Technology | Supplier Device Package | Mounting Type | Speed | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | TO-220-2 | 5 A | 175 ░C | -55 °C | 1.8 V | 2 A | 0 ns | 260 pF | 50 µA | SiC (Silicon Carbide) Schottky | TO-220-2 | Through Hole | 500 mA | 1.2 kV |