GI756 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 6A P600
| Part | Technology | Supplier Device Package | Mounting Type | Speed | Speed | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Standard | P600 | Through Hole | Standard Recovery >500ns | 200 mA | -50 °C | 150 °C | 2.5 µs | 900 mV | P600 Axial | 5 µA | 6 A | 600 V | 150 pF |
Vishay General Semiconductor - Diodes Division | Standard | P600 | Through Hole | Standard Recovery >500ns | 200 mA | -50 °C | 150 °C | 2.5 µs | 900 mV | P600 Axial | 5 µA | 6 A | 600 V | 150 pF |