NSS60200L Series

Low VCE(sat) Transistor, PNP, -60 V, 2.0 A

Catalog

Low VCE(sat) Transistor, PNP, -60 V, 2.0 A

Part	Supplier Device Package	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NSV60200LT1G	SOT-23-3 (TO-236)	100 MHz	220 mV	Surface Mount	150	PNP	60 V	SC-59 SOT-23-3 TO-236-3	2 A	100 nA	-55 °C	150 °C

Catalog

Low VCE(sat) Transistor, PNP, -60 V, 2.0 A

Key Features

• High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101Qualified and PPAP Capable

Description

ON Semiconductor e2 PowerEdge family of Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.