SIHP28 Series

Catalog

MOSFET N-CH 600V 28A TO220AB

Part	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIHP28N60EF-GE3	600 V	Through Hole	2714 pF	-55 °C	150 °C	30 V	123 mOhm	250 W	28 A	MOSFET (Metal Oxide)	120 nC	TO-220-3	10 V	4 V	N-Channel	TO-220AB
Vishay General Semiconductor - Diodes Division SIHP28N65E-GE3	650 V	Through Hole	3405 pF	-55 °C	150 °C	30 V	112 mOhm	250 W	29 A	MOSFET (Metal Oxide)	140 nC	TO-220-3	10 V	4 V	N-Channel	TO-220AB