SSM6N61NU Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 20 V, 4.0 A, 0.033 Ω@4.5V, SOT-1118(UDFN6)

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	FET Feature	FET Feature	Configuration	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Power - Max [Max]
Toshiba Semiconductor and Storage SSM6N61NU,LF	33 mOhm	4 A	1 V	Surface Mount	3.6 nC	150 °C	-55 °C	20 V	Logic Level Gate	1.5 V	2 N-Channel (Dual)	6-UDFNB (2x2)	410 pF	MOSFET (Metal Oxide)	2 W