SIHA21 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 600V 21A TO220
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2030 pF | 30 V | 84 nC | MOSFET (Metal Oxide) | 21 A | 10 V | Through Hole | 35 W | TO-220 Full Pack | -55 °C | 150 °C | 176 mOhm | N-Channel | 4 V | 600 V | TO-220-3 Full Pack |