SI4542 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N/P-CH 30V 8SOIC
| Part | Technology | FET Feature | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Configuration | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Logic Level Gate | 2 W | 50 nC | N and P-Channel | 8-SOIC | Surface Mount | -55 °C | 150 °C | 25 mOhm | 30 V | 8-SOIC | 3.9 mm | 0.154 in | 1 V |