SI4485 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CH 30V 6A 8SO
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 6 A | 30 V | 2.4 W 5 W | 8-SOIC | Surface Mount | -55 °C | 150 °C | 590 pF | 42 mOhm | 4.5 V 10 V | 21 nC | P-Channel | 20 V | 2.5 V |