SI4825 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 14.9A 8SO
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Vgs (Max) | Technology | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 30 V | 14.9 A | 86 nC | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | P-Channel | 2550 pF | 2.5 V | 8-SOIC | 25 V | MOSFET (Metal Oxide) | 2.7 W 5 W | 12.5 mOhm |
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 30 V | 8.1 A | 71 nC | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | P-Channel | 3 V | 8-SOIC | 25 V | MOSFET (Metal Oxide) | 1.5 W | 14 mOhm |