SI7900 Series

Catalog

MOSFET 2N-CH 20V 6A PPAK 1212

Part	FET Feature	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Configuration	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI7900AEDN-T1-GE3	Logic Level Gate	1.5 W	16 nC	PowerPAK® 1212-8 Dual	Surface Mount	900 mV	2 N-Channel (Dual) Common Drain	6 A	MOSFET (Metal Oxide)	26 mOhm	PowerPAK® 1212-8 Dual	20 V	-55 °C	150 °C