Catalog
Nch 60V 240A, TO-263AB, Power MOSFET
Description
AI
RJ1L10BBG is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
Beta
⌘K
Nch 60V 240A, TO-263AB, Power MOSFET
Nch 60V 240A, TO-263AB, Power MOSFET
| Part | FET Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Supplier Device Package | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 105 A | 11000 pF | 160 nC | 150 °C | 192 W | 4.5 V 10 V | MOSFET (Metal Oxide) | 1.85 mOhm | 60 V | Surface Mount | 20 V | TO-263AB | 2.5 V |