IRFU220 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 4.8A TO251AA
| Part | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Mounting Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Supplier Device Package | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 14 nC | 260 pF | 200 V | 4 V | 10 V | IPAK TO-251-3 Short Leads TO-251AA | 800 mOhm | 2.5 W 42 W | Through Hole | 20 V | -55 °C | 150 °C | N-Channel | TO-251AA | MOSFET (Metal Oxide) |