MJW21195 Series

Bipolar Transistor, PNP, 250 V, 16 A

Catalog

Bipolar Transistor, PNP, 250 V, 16 A

Part	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MJW21195G	250 V	200 W	4 MHz	3 V	PNP	TO-247-3	20 hFE	100 µA	150 °C	-65 °C	TO-247-3	Through Hole	16 A

Catalog

Bipolar Transistor, PNP, 250 V, 16 A

Key Features

• Total Harmonic Distortion Characterized

• High DC Current Gain –hFE= 20 Min @ IC= 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

• Pb-Free Packages are Available

Description

The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.