BSS84DWQ Series

50V P-Channel Enhancement Mode Field Effect Transistor

Catalog

50V P-Channel Enhancement Mode Field Effect Transistor

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Configuration	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Power - Max [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Qualification	Grade	Power Dissipation (Max) [Max]
Diodes Inc BSS84V-7	SOT-563	-55 °C	150 °C	130 mA	Logic Level Gate	45 pF	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	50 V	10 Ohm	2 V	SOT-563 SOT-666
Diodes Inc BSS84V-7-79	SOT-563	-55 °C	150 °C	130 mA		45 pF	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	50 V	10 Ohm	2 V	SOT-563 SOT-666	150 mW
Diodes Inc BSS84WQ-7-F	SOT-323	-55 °C	150 °C	130 mA		45 pF	MOSFET (Metal Oxide)	Surface Mount		50 V	10 Ohm	2 V	SC-70 SOT-323		200 mW	5 V	20 V	P-Channel
Diodes Inc BSS84DWQ-7	SOT-363	-55 °C	150 °C	130 mA		45 pF	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	50 V	10 Ohm	2 V	6-TSSOP SC-88 SOT-363	300 mW					AEC-Q101	Automotive
Diodes Inc BSS84-7	SOT-23-3	-55 °C	150 °C	130 mA		45 pF	MOSFET (Metal Oxide)	Surface Mount		50 V	10 Ohm	2 V	SC-59 SOT-23-3 TO-236-3			5 V	20 V	P-Channel			300 mW

Catalog

50V P-Channel Enhancement Mode Field Effect Transistor

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The BSS84WQ is suitable for automotive applicationsrequiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.