RFD16N05LSM Series

N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

Catalog

N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor RFD16N05LSM9A	-55 °C	155 °C	2 V	80 nC	50 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 W	TO-252AA	4 V 5 V	10 V	47 mOhm	16 A	N-Channel	MOSFET (Metal Oxide)	Surface Mount
ON Semiconductor RFD16N05SM9A	-55 °C	175 ░C	4 V		50 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252AA	10 V	20 V	47 mOhm	16 A	N-Channel	MOSFET (Metal Oxide)	Surface Mount	80 nC	72 W	900 pF

Catalog

N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

Key Features

• 16A, 50V

• rDS(ON)= 0.047Ω

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Devicee

• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

Description

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.