SI9424 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 5.6A 8SO
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 40 nC | 9 V | 5.6 A | 1.25 W | 8-SOIC | 20 V | -55 °C | 150 °C | P-Channel | 8-SOIC | 3.9 mm | 0.154 in | 850 mV | 2.5 V 4.5 V | Surface Mount | MOSFET (Metal Oxide) | 25 mOhm |