IRF9 Series

Catalog

MOSFET P-CH 60V 11A D2PAK

Part	Package / Case	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division IRF9Z24STRR	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	3.7 W 60 W	570 pF	Surface Mount	19 nC	20 V	-55 °C	175 ░C	60 V	10 V	11 A	280 mOhm	4 V	TO-263 (D2PAK)	P-Channel
Vishay General Semiconductor - Diodes Division IRF9Z34STRL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	3.7 W 88 W	1100 pF	Surface Mount	34 nC	20 V	-55 °C	175 ░C	60 V	10 V	18 A		4 V	TO-263 (D2PAK)	P-Channel	140 mOhm
Vishay General Semiconductor - Diodes Division IRF9Z34	TO-220-3	MOSFET (Metal Oxide)		1100 pF	Through Hole	34 nC	20 V	-55 °C	175 ░C	60 V	10 V	18 A		4 V	TO-220AB	P-Channel	140 mOhm	88 W