FCPF165N65S3R0L Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FCPF165N65S3R0L	10 V	165 mOhm	Through Hole	TO-220F-3	650 V	-55 °C	150 °C	N-Channel	TO-220-3 Full Pack	1415 pF	4.5 V	19 A	MOSFET (Metal Oxide)	30 V	35 nC	35 W
ON Semiconductor FCPF165N65S3L1	10 V	165 mOhm	Through Hole	TO-220F-3	650 V	-55 °C	150 °C	N-Channel	TO-220-3 Full Pack	1415 pF	4.5 V	19 A	MOSFET (Metal Oxide)	30 V	35 nC	35 W

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F

Key Features

• 700 V @ TJ = 150 °C

• Ultra Low Gate Charge (Typ. Qg = 35 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 345 pF)

• Internal Gate Resistance: 4.6 ohm

• Optimized Capacitance

• Typ. RDS(on) = 140 mΩ

• 100% Avalanche Tested

• RoHS Compliant

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.