SFH620 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
OPTOISOLATOR 5.3KV TRANS 4-DIP
| Part | Voltage - Forward (Vf) (Typ) | Operating Temperature [Max] | Operating Temperature [Min] | Output Type | Turn On / Turn Off Time (Typ) | Package / Case | Current - Output / Channel | Current Transfer Ratio (Min) [Min] | Voltage - Isolation | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Current - DC Forward (If) (Max) [Max] | Supplier Device Package | Vce Saturation (Max) [Max] | Voltage - Output (Max) [Max] | Number of Channels | Current Transfer Ratio (Max) | Mounting Type | Current Transfer Ratio (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1.25 V | 100 °C | -55 °C | 1.81 mOhm | 2.3 µs 3 µs | 4-DIP (0.300" 7.62mm) | 50 mA | 40 % | 5300 Vrms | 2 µs | 2 µs | 60 mA | 4-DIP | 400 mV | 70 V | 1 | 125 % | Through Hole | |
Vishay General Semiconductor - Diodes Division | 1.25 V | 100 °C | -55 °C | 1.81 mOhm | 2.3 µs 3 µs | 4-DIP | 50 mA | 63 % | 5300 Vrms | 2 µs | 2 µs | 60 mA | 4-DIP | 400 mV | 70 V | 1 | 200 % | Through Hole | |
Vishay General Semiconductor - Diodes Division | 1.25 V | 100 °C | -55 °C | 1.81 mOhm | 2.3 µs 3 µs | 4-DIP | 50 mA | 63 % | 5300 Vrms | 2 µs | 2 µs | 60 mA | 4-DIP | 400 mV | 70 V | 1 | 200 % | Through Hole | |
Vishay General Semiconductor - Diodes Division | 1.25 V | 100 °C | -55 °C | 1.81 mOhm | 2.3 µs 3 µs | 4-DIP | 50 mA | 40 % | 5300 Vrms | 2 µs | 2 µs | 60 mA | 4-DIP | 400 mV | 70 V | 1 | 125 % | Through Hole | |
Vishay General Semiconductor - Diodes Division | 1.25 V | 100 °C | -55 °C | 1.81 mOhm | 2.3 µs 3 µs | 4-DIP | 50 mA | 100 % | 5300 Vrms | 2 µs | 2 µs | 60 mA | 4-DIP | 400 mV | 70 V | 1 | 320 % | Through Hole | |
Vishay General Semiconductor - Diodes Division | 1.25 V | 100 °C | -55 °C | 1.81 mOhm | 2.3 µs 3 µs | 4-DIP | 50 mA | 100 % | 5300 Vrms | 2 µs | 2 µs | 60 mA | 4-DIP | 400 mV | 70 V | 1 | 320 % | Through Hole | |
Vishay General Semiconductor - Diodes Division | 1.25 V | 100 °C | -55 °C | 1.81 mOhm | 2.3 µs 3 µs | 4-SMD Gull Wing | 50 mA | 63 % | 5300 Vrms | 2 µs | 2 µs | 60 mA | 4-SMD | 400 mV | 70 V | 1 | 200 % | Surface Mount | |
Vishay General Semiconductor - Diodes Division | 1.25 V | 100 °C | -55 °C | 1.81 mOhm | 2 µs 25 µs | 4-SMD Gull Wing | 50 mA | 100 % | 5300 Vrms | 60 mA | 4-SMD | 400 mV | 70 V | 1 | Surface Mount | 600 % |