NSR01L30NX Series

100 mA, 30 V, Schottky Barrier Diode

Catalog

100 mA, 30 V, Schottky Barrier Diode

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Package / Case	Package / Case	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Mounting Type
ON Semiconductor NSR01F30NXT5G	500 mV	Any Speed	200 mA	7 pF	50 çA	125 °C	0603 Metric	0201	Schottky	100 mA	30 V	0.6	2-DSN	0.3	Surface Mount
ON Semiconductor NSR01L30NXT5G	530 mV	Any Speed	200 mA	7 pF	3 µA	150 °C	0603 Metric	0201	Schottky	100 mA	30 V	0.6	2-DSN	0.3	Surface Mount
ON Semiconductor NSR01F30NXT5G	500 mV	Any Speed	200 mA	7 pF	50 çA	125 °C	0603 Metric	0201	Schottky	100 mA	30 V	0.6	2-DSN	0.3	Surface Mount

Catalog

100 mA, 30 V, Schottky Barrier Diode

Key Features

• Low Forward Voltage Drop

• Low Reverse Current

• Very High Switching Speed

• Reverse Voltage and Current Protection

Description

The Schottky diodes are optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon No lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100 percent utilization of the package area for active silicon offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.