SN74LVC1G08-EP Series

Enhanced product, 1-ch, 2-input 1.65-V to 5.5-V 32-mA drive strength AND gate

Catalog

Enhanced product, 1-ch, 2-input 1.65-V to 5.5-V 32-mA drive strength AND gate

Part	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Circuits	Current - Quiescent (Max) [Max]	Package / Case	Current - Output High, Low [y]	Current - Output High, Low [x]	Number of Inputs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Logic Type	Max Propagation Delay @ V, Max CL	Input Logic Level - Low [Max]	Input Logic Level - Low [Min]	Input Logic Level - High [Min]	Input Logic Level - High [Max]	Supplier Device Package [x]	Supplier Device Package [y]
Texas Instruments SN74LVC1G08DCKRG4	SC-70-5	5.5 V	1.65 V	1	10 µA	5-TSSOP SC-70-5 SOT-353	32 mA	32 mA	2	-40 °C	125 °C	Surface Mount	AND Gate	4 ns
Texas Instruments SN74LVC1G08DCKTE4	SC-70-5	5.5 V	1.65 V	1	10 µA	5-TSSOP SC-70-5 SOT-353	32 mA	32 mA	2	-40 °C	125 °C	Surface Mount	AND Gate	4 ns
Texas Instruments SN74LVC1G08DPKR
Texas Instruments SN74LVC1G08MDBVREP	SOT-23-5	5.5 V	1.65 V	1	10 µA	SC-74A SOT-753	32 mA	32 mA	2	-55 °C	125 °C	Surface Mount	AND Gate	5 ns
Texas Instruments V62/04733-01XE	SC-70-5	5.5 V	1.65 V	1	10 µA	5-TSSOP SC-70-5 SOT-353	32 mA	32 mA	2	-40 °C	85 °C	Surface Mount	AND Gate	4 ns	0.8 V	0.7 V	1.7 V	2 V
Texas Instruments SN74LVC1G08DBVRG4	SOT-23-5	5.5 V	1.65 V	1	10 µA	SC-74A SOT-753	32 mA	32 mA	2	-40 °C	125 °C	Surface Mount	AND Gate	4 ns
Texas Instruments SN74LVC1G08DBVRE4	SOT-23-5	5.5 V	1.65 V	1	10 µA	SC-74A SOT-753	32 mA	32 mA	2	-40 °C	125 °C	Surface Mount	AND Gate	4 ns
Texas Instruments SN74LVC1G08DBV6
Texas Instruments SN74LVC1G08YEAR	5-DSBGA	5.5 V	1.65 V	1	10 µA	5-XFBGA DSBGA	32 mA	32 mA	2	-40 °C	85 °C	Surface Mount	AND Gate	4 ns					1.4	0.9
Texas Instruments SN74LVC1G08DCKRE4	SC-70-5	5.5 V	1.65 V	1	10 µA	5-TSSOP SC-70-5 SOT-353	32 mA	32 mA	2	-40 °C	125 °C	Surface Mount	AND Gate	4 ns

Catalog

Enhanced product, 1-ch, 2-input 1.65-V to 5.5-V 32-mA drive strength AND gate

Key Features

• Controlled BaselineOne Assembly/Test Site, One Fabrication SiteExtended Temperature Performance of -55°C to 125°CEnhanced Diminishing Manufacturing Sources (DMS) SupportEnhanced Product-Change NotificationQualification Pedigree(1)Supports 5-V VCCOperationInputs Accept Voltages to 5.5 VMax tpdof 3.6 ns at 3.3 VLow Power Consumption, 10-µA Max ICC±24-mA Output Drive at 3.3 VIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.Controlled BaselineOne Assembly/Test Site, One Fabrication SiteExtended Temperature Performance of -55°C to 125°CEnhanced Diminishing Manufacturing Sources (DMS) SupportEnhanced Product-Change NotificationQualification Pedigree(1)Supports 5-V VCCOperationInputs Accept Voltages to 5.5 VMax tpdof 3.6 ns at 3.3 VLow Power Consumption, 10-µA Max ICC±24-mA Output Drive at 3.3 VIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Protection Exceeds JESD 222000-V Human-Body Model (A114-A)200-V Machine Model (A115-A)1000-V Charged-Device Model (C101)(1)Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

Description

This single 2-input positive-AND gate is designed for 1.65-V to 5.5-V VCCoperation. The SN74LVC1G08-Q1 device performs the Boolean function or in positive logic. This device is fully specified for partial-power-down applications using I off. The I off circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range. The SN74LVC1G08 is available in a variety of packages, including the small DRY package with a body size of 1.45 mm × 1.00 mm. This single 2-input positive-AND gate is designed for 1.65-V to 5.5-V VCCoperation. The SN74LVC1G08-Q1 device performs the Boolean function or in positive logic. This device is fully specified for partial-power-down applications using I off. The I off circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down. The CMOS device has high output drive while maintaining low static power dissipation over a broad VCCoperating range. The SN74LVC1G08 is available in a variety of packages, including the small DRY package with a body size of 1.45 mm × 1.00 mm.