TK3R1E04 Series

Catalog

12V - 300V MOSFETS, N-CH MOSFET, 40 V, 0.0031 Ω@10V, TO-220, U-MOSⅨ-H

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage TK3R1E04PL,S1X	4670 pF	TO-220	TO-220-3	63.4 nC	175 °C	87 W	2.4 V	N-Channel	100 A	Through Hole	40 V	MOSFET (Metal Oxide)	20 V	3.8 mOhm	4.5 V 10 V