Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-363(US6)
Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-363(US6)
Bipolar Transistors, NPN + PNP Bias Resistor Built-in Transistors (BRT), 22 kΩ/47 kΩ, SOT-363(US6)
| Part | Transistor Type | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Current - Collector Cutoff (Max) [Max] | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Package / Case | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1 NPN 1 PNP - Pre-Biased (Dual) | 100 mA | US6 | 22 kOhms | 47 kOhms | 500 nA | Surface Mount | 50 V | 200 mW | 6-TSSOP SC-88 SOT-363 | 80 | 300 mV | 200 MHz 250 MHz |
Toshiba Semiconductor and Storage | 1 NPN 1 PNP - Pre-Biased (Dual) | 100 mA | US6 | 22 kOhms | 47 kOhms | 500 nA | Surface Mount | 50 V | 200 mW | 6-TSSOP SC-88 SOT-363 | 80 | 300 mV | 200 MHz 250 MHz |
 Toshiba Semiconductor and Storage | 1 NPN 1 PNP - Pre-Biased (Dual) | 100 mA | ES6 | 22 kOhms | 47 kOhms | 500 nA | Surface Mount | 50 V | 100 mW | SOT-563 SOT-666 | 80 | 300 mV | 200 MHz 250 MHz |
Toshiba Semiconductor and Storage | 1 NPN 1 PNP - Pre-Biased (Dual) | 100 mA | US6 | 22 kOhms | 47 kOhms | 100 µA | Surface Mount | 50 V | 200 mW | 6-TSSOP SC-88 SOT-363 | 80 | 300 mV | 200 MHz 250 MHz |