TK32E12N1 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 120 V, 0.0138 Ω@10V, TO-220, U-MOSⅧ-H
| Part | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | TO-220-3 | 2000 pF | N-Channel | 20 V | 34 nC | MOSFET (Metal Oxide) | 60 A | Through Hole | 13.8 mOhm | 98 W | 120 V | TO-220 | 150 °C | 10 V | 4 V |